摘要 : A hot filament CVD process based on hydrogen etching of graphite has been developed to synthesize diamond films and nanotips. The graphite sheet was placed close to the substrate and only hydrogen was supplied during deposition. N... 展开 A hot filament CVD process based on hydrogen etching of graphite has been developed to synthesize diamond films and nanotips. The graphite sheet was placed close to the substrate and only hydrogen was supplied during deposition. No hydrocarbon feed gases are required for this process. High quality diamond films were synthesized with high growth rate on P-type (100)-oriented silicon wafers without discharge or bias. The diamond growth rate is approximately five times higher than that through conventional hot filament chemical vapor deposition using a gas mixture of methane and hydrogen (1 vol.% methane) under similar deposition conditions. The diamond films synthesized in this process exhibit smaller crystallites and contain smaller amount of non-diamond carbon phases. Synthesis of well-aligned diamond nanotips with various orientation angles was achieved on the CVD diamond-coated Si substrate when the substrate holder was negatively biased in a DC glow discharge. The nanotips grown at locations far enough from the sample edges are aligned vertically, while those around the sample edges are tilted and point away from the sample center. The alignment orientation of the nanotips appears to be determined by the direction of the local electric field lines on the sample surfaces. (C) 2004 Elsevier Ltd. All rights reserved. 收起