摘要: Picosecond photoconductive-switch performance was demonstrated with a novel material deposited by molecular beam epitaxy at low substrate temperatures using Ga and As4 beam fluxes. For a photoconductive-gap switch fabricated on a ... 展开 Picosecond photoconductive-switch performance was demonstrated with a novel material deposited by molecular beam epitaxy at low substrate temperatures using Ga and As4 beam fluxes. For a photoconductive-gap switch fabricated on a coplanar transmission line, the speed is 1.6 ps (full width at half maximum) and the voltage response is 10 to 100 times greater than that of conventional photoconductive switches. Since LT GaAs is compatible with GaAs device and IC technologies, this photoconductive switch may find extensive use in high-speed device and circuit testing. Keywords: Reprints; Picosecond photoconductive switch performance; Molecular beam epitaxy; Coplanar transmission line. (jhd) 收起