摘要: Linear photoconductive gallium arsenide (GaAs) fast closing switches for microwave applications, such as frozen wave pulse generation, are analyzed and compared to experimental measurements. Material effects in photo-conductive fr... 展开 Linear photoconductive gallium arsenide (GaAs) fast closing switches for microwave applications, such as frozen wave pulse generation, are analyzed and compared to experimental measurements. Material effects in photo-conductive frozen wave generators fabricated in semiconductor-based microstrip transmission line are studied from three perspectives; frozen wave propagation in the line; the spacing between the switches in a frozen wave generator and their maximum number; and the switching behavior of the gap-switch itself, which is modeled as a lumped-element, modified Ebers-Moll equivalent circuit. The experimental transient behavior of hybrid gap-switches fabricated on semi-insulating GaAs with ohmic and non-ohmic contacts is compared with predicted performance. Picosecond laser pulses, doubled to 527 micrometer wavelength are used to excite linear photoconductivity in 75 micrometer gap switches mounted in a test fixture of 50 ohm microstrip lines on alumina. 收起