摘要: It is pointed out that the large strains produced by hypervelocity impacts can be expected to produce dramatic changes in the chemical bonding (electronic structures) of materials. This will change the mechanical behavior towards ... 展开 It is pointed out that the large strains produced by hypervelocity impacts can be expected to produce dramatic changes in the chemical bonding (electronic structures) of materials. This will change the mechanical behavior towards increased ductility when a semiconductor is compressed until it becomes metallic; and towards increased brittleness when a transition metal is expanded so as to localize its d-band electrons. Both isotropic compression (expansion) and shear strains can cause these transformations. Critical deformation criteria are given based on the observed cubic to tetragonal transformations in compressed semiconductors. 收起