摘要: A summary of recent positron annihilation experiments on molecular beam epitaxy (MBE) grown III-V layers is Presented. Variable energy positron beam measurements on Al(sub 0.32)Ga(sub 0.68)As undoped and Si doped have been complet... 展开
作者 | Umlor, M. T. Keeble, D. J. Asoka-Kumar, P. Lynn, K. G. Cooke, P. W. | ||
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原报告号 | BNL-60605 | 总页数 | 16 |
主办者 | Department of Energy, Washington, DC. | ||
报告分类号 | [46D Solid State Physics] | ||
报告类别/文献类型 | DE / NTIS科技报告 | ||
关键词 | Gallium Arsenides Molecular Beam Epitaxy Annealing Annihilation Crystal Doping Defects Doped Materials Ion Implantation Positron Beams Silicon Temperature Dependence |