摘要: Zinc Selenide (ZnSe) crystals grown using the High Pressure Bridgman (HPB) technique were used to fabricate solid-state radiation detectors measuring 10 x 10 x 2 mm(sup 3). Sputtered platinum and gold contacts were applied to poli... 展开 Zinc Selenide (ZnSe) crystals grown using the High Pressure Bridgman (HPB) technique were used to fabricate solid-state radiation detectors measuring 10 x 10 x 2 mm(sup 3). Sputtered platinum and gold contacts were applied to polished detector blanks. Voltage versus current characteristics were determined for the devices at 25 C. Pulse height spectra were obtained using (sup 241)Am and (sup 109)Cd at both 25 C and 150 C with applied bias of 9,000 V/cm. Current versus temperature was measured over the temperature range of 30 C to 150 C. Performance was measured at energies of 22.1 and 59.5 keV over a temperature range of (minus)70 C to 170 C. Current versus dose rate was measured with 662 keV gamma irradiation. A value of the Mobility-Lifetime product ((mu)(tau)) for electrons was estimated. Time and temperature dependence of photo-peak position using Pulse Height Analysis (PHA) was studied. 收起