摘要: MATERIALS AND PROCESSES Two dielectric isolation methods have been explored for implementation of circuits for this program. These are: (1) thermally grown silicon dioxide with a polycrystalline silicon matrix, and (2) glass isola... 展开 MATERIALS AND PROCESSES Two dielectric isolation methods have been explored for implementation of circuits for this program. These are: (1) thermally grown silicon dioxide with a polycrystalline silicon matrix, and (2) glass isolation with a dummy silicon support slice. The latter technique appears most applicable to the present program because of still lower capacitances to the substrate. In addition, the glass isolation lends itself to the simpler implementa¬tion of beam-lead technology if desired.CIRCUITS Emitter current-steered (ECL) and saturating high speed (TTL) circuit configurations have been explored, both with the view toward obtaining the contract's required speed/power product. In addition, the circuits were considered from the point of view of radiation hardening possibilities. The present activities are direct¬ed toward the use of the TTL logic function. Linear high frequency amplifier studies have been performed and evaluations made as to implementation utilizing dielectric isolation techniques. 收起