摘要: This report describes the materials used and the facilities, techniques, and processes which were developed in an effort to fabricate experimental monolithic silicon PNP integrated circuits. The following processes are described: ... 展开 This report describes the materials used and the facilities, techniques, and processes which were developed in an effort to fabricate experimental monolithic silicon PNP integrated circuits. The following processes are described: thermal polish, N-type phosphorous isolation diffusion, N-type antimony base and resistor diffusion, N+ phosphorous contact diffusion, P-type boron emitter, guard ring and collector contact diffusion, photolithography, microphotography, aluminum metalizing, chip mounting, and nail-head thennocompression bonding. 收起