摘要: Topics discussed include the following:Basic principles;Variables and parameter relations;Development of intrinsic device theory and related fundamental limitations and their measurements;Circuit parameter relations;Design of tran... 展开 Topics discussed include the following:Basic principles;Variables and parameter relations;Development of intrinsic device theory and related fundamental limitations and their measurements;Circuit parameter relations;Design of transistor R-C amplifiers;Circuit stabilization;Transformer-coupled amplifiers;RF and IF amplifiers;Nonlinear theory of oscillators;Practical L-C oscillators; R-C oscillators and time-delay oscillators;Design of mixers and converters;Transistor multivibrators;Switching and sampling circuits. 收起