摘要: Thin GaAs epi-layers with good crystallographic quality were grown using a (100) Si-substrate on which a thin Ge epi-interlayer was grown by CVD from germane. Both antireflection-coated metal oxide semiconductor (AMOS) and n(+)/p ... 展开
作者 | Yeh, Y. C. M. | ||
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原报告号 | N81-24538 | 总页数 | 101 |
报告类别/文献类型 | NASA / NTIS科技报告 | ||
关键词 | Energy conversion efficiency Gallium arsenides Homojunctions Metal oxide semiconductors Solar cells Thin films Crystal growth Interlayers Vapor deposition |