摘要: InGaAsP/InP multiple quantum wells have been prepared by Impurity- Free Vacancy Disordering (IFVD). The luminescent characteristics was investigated using photoluminescence (PL) and photoreflectance (PR), from which the band gap b... 展开 InGaAsP/InP multiple quantum wells have been prepared by Impurity- Free Vacancy Disordering (IFVD). The luminescent characteristics was investigated using photoluminescence (PL) and photoreflectance (PR), from which the band gap blue shift was observed. SiN4, SiO2 and SOG were used for the dielectric layer to create the vacancies. All samples were annealed by rapid thermal annealing (RTA). The results indicate that the band gap blue shift varies with the dielectric layers and annealing temperature. The SiO2 capping was successfully used with an InGaAs cladding layer to cause larger band tuning effect in the InGaAs/InP MQWs than the Si3N4 capping with an InGaAs cladding layer. On the other hand, samples with the SiN4-InP cap layer combination also show larger energy shifts than that with SiO2-InP cap layer combination. 收起