摘要: Silicon-on-insulator bipolar transistors fabricated using the Harris UHF-1process, were irradiated at room temperature with 30 and 60 MeV electron beams. Some of the transistors on each die were configured and biased as a simple o... 展开
作者 | Brittain, D. R. | ||
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原报告号 | ADA295877 | 总页数 | 94 |
报告类别/文献类型 | AD / NTIS科技报告 | ||
关键词 | Nuclear radiation Solar radiation Radiation dosage Bipolar transistors Radiation hardening Radiation effects Failure(Electronics) Radiation belts Operational amplifiers Nuclear explosions Geomagnetism Spacecraft Space environments Plasmas(Phy |