摘要: The subject of this paper is the mathematical modeling of a recently proposedclass of electron-beam-controlled high-power semiconductor switches that are able to overcome the space-charge limitation of conventional electron bombar... 展开 The subject of this paper is the mathematical modeling of a recently proposedclass of electron-beam-controlled high-power semiconductor switches that are able to overcome the space-charge limitation of conventional electron bombarded semiconductor devices by utilizing the secondary ionization effects of cathodoluminiscence and bremsstrahlung. Current densities of several kA/cm squared; at forward voltages some 10 V can be controlled with an electron beam of 100 Kev and 1 A cm squared; holdoff voltages of more than 100 kV/cm and dark currents as small as 10 micron A/cm squared are possible. The concept has several possible applications: Its fast and repetitive closing and opening under load makes it suitable for inductive energy storage applications; its linear characteristics suggest use as a high-power modulation device. Keywords: Gallium arsenides. (Author) (kr) 收起