摘要 : In this paper, an integrated device which realized the dual-mode integration of power amplifier (PA) and radio frequency (RF) switch based on GaN dual-gate (DG) structure is designed and fabricated. The integrated device provides ... 展开 In this paper, an integrated device which realized the dual-mode integration of power amplifier (PA) and radio frequency (RF) switch based on GaN dual-gate (DG) structure is designed and fabricated. The integrated device provides two working modes and meets the performance requirements of PA and RF switch. In the transmit (Tx) mode, the integrated device is used as PA. At the frequency of 3.6 GHz, compared with the conventional GaN HEMT (high electron mobility transistor) as PA, due to the field modulation effect of the dual-gate structure, the current collapse is effectively suppressed, and the output power density $(P_{out})$ of the integrated device is increased from 6.90 W/mm to 7.85 W/mm, and the power added efficiency (PAE) is increased from 44.3% to 51.1%. In the receive (Rx) mode, the integrated device is used as RF switch. Compared with conventional RF switch, the isolation of integrated devices is significantly improved. At the frequency of 3.6GHz, the isolation is improved from 19.4 dB to 41.0 dB; At the frequency of 40 GHz, the isolation is improved from 3.0 dB to 29.7 dB. The integrated device provides a novel function integration scheme for RF frontends, with great potential for improving the integration and dimension of future communication systems. 收起