摘要 : In this work, vertical gallium nitride (GaN) trench Junction Barrier Schottky (JBS) diodes fabricated with a novelty slanted p-GaN sidewall on a 2-inch free-standing GaN (FS-GaN) substrate were demonstrated. The slanted sidewall o... 展开 In this work, vertical gallium nitride (GaN) trench Junction Barrier Schottky (JBS) diodes fabricated with a novelty slanted p-GaN sidewall on a 2-inch free-standing GaN (FS-GaN) substrate were demonstrated. The slanted sidewall on edge of devices was conducted to suppress the peak of electric field distributions at high voltage. By realizing an off-state breakdown voltage $V_{BR}$ of 2 kV and an on-state resistance $R_{on}$ of 1.34 $\text{m}\Omega \bullet $ cm2, the devices fabricated in this work achieved the highest power device figure-of-merit $V_{BR}^{2}/R_{on}$ of 3.0 GW/cm2 in the reported vertical GaN JBS diodes which showed great potential in high voltage applications. 收起