摘要 : In this letter, an aggressively scaled ion-sensitive field-effect tran- sistor (ISFET) has been proposed as a potential pH sensor with high sensitivity, low power consumption, and low pH resolution. The associated field-effect tra... 展开 In this letter, an aggressively scaled ion-sensitive field-effect tran- sistor (ISFET) has been proposed as a potential pH sensor with high sensitivity, low power consumption, and low pH resolution. The associated field-effect transistor (FET) structure of the proposed device is a hetero-structured vertical tunnel FET with Al$_{2}$O$_{3}$ as a high-$\kappa$ dielectric. The low voltage operation ability and the subthermionic subthreshold swing of the tunnel FET structure reduce the power consumption and increase the current sensitivity, whereas the high-$\kappa$ dielectric helps achieve higher voltage sensitivity. Implemented in the Cadence environment, the device has been configured as a transconductance amplifier that is biased in the weak-inversion regime to ensure higher current sensitivity and lower power consumption. The simulation results demonstrate that the proposed ISFET device has near-Nernstian voltage sensitivity (59.03 mV/pH), higher current sensitivity (4.59 dec/pH), ultralow power consumption (only 0.09 pW), and a lower normalized pH resolution (1.24 mpH). 收起