摘要 : The fabrication of nanoscale electronic synapses is an essential step towards the development of neuromorphic devices having a high integration density. Excellent learning abilities of such electronic synapses are crucial for the ... 展开 The fabrication of nanoscale electronic synapses is an essential step towards the development of neuromorphic devices having a high integration density. Excellent learning abilities of such electronic synapses are crucial for the emulation of human brain potentialities. In order to achieve the same, linearly potentiated synaptic weight modulation (having negligible variability at nanoscale) is a primary and essential requirement. Here, we investigate solid-state memristor-based nanoscale synaptic emulators that exhibit linearly potentiated synaptic weight entries irrespective of amplitude, width, and frequency of the input voltage pulses. The memristive synapses under consideration replicate all the essential synaptic functions including potentiation and depression, spike-rate dependent plasticity, paired-pulse facilitation, and both excitatory-inhibitory responses and therefore, fulfil the requirements to build neuromorphic devices which can emulate brain-like functionalities. The incor-poration of metallic ions in an amorphous oxide thin film leads to both distinctly linear weight adjustability and highly stable resistive switching operation which depend on the amplitude of the driving bias voltage. This study will help to understand and optimize the linearity in performances of oxide memristor-based synapses for neuromorphic applications. 收起