摘要 : <Heading>Abstract</Heading> <Para>In/n-InP/p-Si/Al heterojunction has been manufactured by depositing InP layer onto p-Si single crystal substrates by liquid phase epitaxy (LPE) technique. InP layers was found ... 展开
作者 | E. M. El-Menyawy A. Ashery M. M. El-Nahass |
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作者单位 | |
期刊名称 | 《Journal of materials science》 |
页码/总页数 | 10488-10494 / 7 |
语种 | 英语 |
关键词 | LPE InP rods Heterojunctions Ideality factor Barrier height Series resistance Abrupt junction |
DOI | 10.1007/s10854-017-6822-9 |
馆藏号 | TB-220 |