摘要 : Using effective-mass Hamiltonian model of semiconductors quantum well structures, we investigate the electronic structures of the Γ-conduction and L-conduction subbands of GeSn/GeSiSn strained quantum well structure with an arbitr... 展开
作者 | Zhu~ Yuan-Hui Xu~ Qiang Fan~ Wei-Jun Wang~ Jian-Wei |
---|---|
作者单位 | |
期刊名称 | 《Journal of Applied Physics》 |
页码/总页数 | P.073108-073108-8 / 8 |
语种 | 英语 |
DOI | 10.1063/1.3329424 |
馆藏号 | IELEP0224 |