摘要 : Atomic configurations and formation energies of native defects in an unsaturated GaN nanowire grown along the [001] direction and with (100) lateral facets are studied using large-scale ab initio calculation. Cation and anion vaca... 展开
作者 | Wang~ Zhiguo Li~ Jingbo Gao~ Fei Weber~ William J. |
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作者单位 | |
期刊名称 | 《Journal of Applied Physics》 |
页码/总页数 | P.044305-044305-6 / 6 |
语种/中图分类号 | 英语 / TN |
DOI | 10.1063/1.3476280 |
馆藏号 | IELEP0224 |