摘要 : High-dielectric constant (high-k) gate materials, such as HfSiO_x and HfAlO_x, fabricated by atomic-layer deposition techniques were characterized using monoenergetic positron beams. Measurements of the Doppler broadening spectra ... 展开
作者 | A. Uedono T. Naito T. Otsuka K. Ito K. Shiraishi K. Yamabe S. Miyazaki H. Watanabe N. Umezawa A. Hamid T. Chikyow T. Ohdaira R. Suzuki S. Ishibashi S. Inumiya S. Kamiyama Y. Akasaka Y. Nara K. Yamada |
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作者单位 | |
期刊名称 | 《Physica status solidi》 |
页码/总页数 | 3599-3604 / 6 |
语种/中图分类号 | 英语 / O48 |
关键词 | dielectric thin films positron annihilation |
馆藏号 | O-153 |