摘要 : Graphene/silicon(Gr/Si)Schottky barrier solar cells(SBSCs)are attractive for harvesting solar energy and have been gaining grounds for its low-cost solution-processing.The interfacial barrier between graphene and silicon facilitat... 展开 Graphene/silicon(Gr/Si)Schottky barrier solar cells(SBSCs)are attractive for harvesting solar energy and have been gaining grounds for its low-cost solution-processing.The interfacial barrier between graphene and silicon facilitates the reducing excessive carrier recombination while accelerating the separation processes of photo-generated carriers at the interface,which empowers the performance of Gr/Si SBSCs.However,the difficulty to control the interface thickness prevents its application.Here,we introduce the graphene oxide quantum dots(GOQDs)as a unique interfacial modulation species with tunable thickness by controlling the GOQDs particle size.The power conversion efficiency(PCE)of 13.67%for Gr/Si-based SBSC with outstanding stability in the air is obtained with the optimal barrier thickness(26 nm)and particle size(4.15 nm)of GOQDs.The GOQDs in Gr/Si-based SBSCs provide the extra band bending which further enhances the PCE for its photovoltaic applications. 收起