摘要 :
We have studied the electron spin injection efficiency from a CoFeB/MgO spin injector into AlGaAs/GaAs semiconductor light emitting diodes. The circular polarization of the electroluminescence signal reaches a value as large as 32...
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We have studied the electron spin injection efficiency from a CoFeB/MgO spin injector into AlGaAs/GaAs semiconductor light emitting diodes. The circular polarization of the electroluminescence signal reaches a value as large as 32% at 100 K under a 0.8 T magnetic field. We show that the spin injection efficiency increases with the increase in the MgO barrier thickness from 1.4 to 4.3 nm. Moreover, a higher spin injection efficiency is obtained for MgO barriers grown at 300 ℃ compared to the ones grown at room temperature. This effect is attributed to the MgO texturing occurring at high temperatures.
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