摘要 :
Low temperature (10 K) high voltage bias dynamic conductivity (up to 2.7 V) and shot noise (up to 1 V) were studied in epitaxial Fe(100)/Fe-C/MgO(100)/Fe(100) magnetic tunnel junctions as a function of the magnetic state. The junc...
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Low temperature (10 K) high voltage bias dynamic conductivity (up to 2.7 V) and shot noise (up to 1 V) were studied in epitaxial Fe(100)/Fe-C/MgO(100)/Fe(100) magnetic tunnel junctions as a function of the magnetic state. The junctions show large tunnel magnetoresistance (185% at 300 K and 330% at 4 K). Multiple sign inversion of the magnetoresistance is observed for bias polarity when the electrons scan the electronic structure of the bottom Fe-C interface. The shot noise shows a Poissonian character. This demonstrates a pure spin-dependent direct tunneling mechanism and validates the high structural quality of the MgO barrier.
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