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A detailed investigation of the steady-state and transient leakage currents in thin oxides is proposed. The experimental data are compared with numerical results obtained from a model based on an inelastic trap-assisted tunneling ...
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A detailed investigation of the steady-state and transient leakage currents in thin oxides is proposed. The experimental data are compared with numerical results obtained from a model based on an inelastic trap-assisted tunneling process, which includes both electron and hole contributions. In order to accurately reproduce the transient discharge currents, a continuous distribution of oxide traps was adopted. The energies of these levels can be either in correspondence of the conduction or valence band edges of the adjacent silicon/polysilicon layers. Both electrons and holes contribute to the transient stress-induced leakage current (SILC), but the extracted trap densities cannot account for the steady-state SILC. A different mechanism, involving trap levels with energy aligned to the energy gap of the silicon layers is proposed and is developed in the following paper. The model can be applied to any type of device and bias conditions and may be used to correctly recognize the role of electron and hole SILC and the spatial and energy distribution of defect states.
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The leakage current-voltage characteristics of rf-magnetron sputtered BaTa/sub 2/O/sub 6/ film in a capacitor with the top aluminum and the bottom indium-tin-oxide electrodes have been investigated as a function of applied field a...
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The leakage current-voltage characteristics of rf-magnetron sputtered BaTa/sub 2/O/sub 6/ film in a capacitor with the top aluminum and the bottom indium-tin-oxide electrodes have been investigated as a function of applied field and temperature. In order to study the effect of the surface treatment on the electrical characteristics of as-deposited film we performed an oxygen plasma treatment on BaTa/sub 2/O/sub 6/ surface. The dc current-voltage, bipolar pulse charge-voltage, dc current-time, and small ac signal capacitance-frequency characteristics were measured to study the electrical and the dielectric properties of BaTa/sub 2/O/sub 6/ thin film. All of the BaTa/sub 2/O/sub 6/ films in this study exhibited a low leakage current, a high breakdown field strength (3-4.5 MV/cm), and a high dielectric constant (20-30). From the temperature dependence of the leakage current, we could conclude that the dominant conduction mechanism under high electrical fields (<1 MV/cm) is ascribed to the Schottky emission while the ohmic conduction is dominant at low electrical fields (>1 MV/cm). Furthermore, the oxygen plasma treatment on the surface of as-deposited BaTa/sub 2/O/sub 6/ resulted in a lowering of the interface barrier height and thus, a reduction of the leakage current at Al under a negative bias. This can be explained by the formation of Ba-rich metallic layer by surface etching effect and by filling the oxygen vacancies in the bulk.
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Gate induced drain leakage (GIDL) is frequently described by band-to-band tunneling. This mechanism is insensitive to temperature and occurs only under strong electric fields. Under the condition of small electric fields, however,...
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Gate induced drain leakage (GIDL) is frequently described by band-to-band tunneling. This mechanism is insensitive to temperature and occurs only under strong electric fields. Under the condition of small electric fields, however, GIDL exhibits a strong dependence on temperature, which is due to trap-assisted generation of electron hole pairs. This generation mechanism is based on the Shockley-Read-Hall (SRH) equation involving field dependent emission probabilities due to Fowler-Nordheim (FN) and Poole-Frenkel effect. The proposed model of an acceptor-like interface trap is able to reproduce the experimental results. Temperature and voltage dependencies for a p-MOSFET are correctly calculated for one single fitting parameter, i.e., the interface trap density corresponding to N/sub t/=1/spl times/10/sup 14/(1/eV m/sup 2/).
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Experiments of gate leakage current in a double-channel n-AlGaAs/GaAs FET with SiN/sub x/ film passivation indicated that the gate leakage current and its stability depend critically on the stoichiometry of the surface. The conten...
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Experiments of gate leakage current in a double-channel n-AlGaAs/GaAs FET with SiN/sub x/ film passivation indicated that the gate leakage current and its stability depend critically on the stoichiometry of the surface. The content of NH/sub 4/ OH in the etching solution prior to the SiN/sub x/ film deposition and the NH/sub 3//SiH/sub 4/ gas content ratio, particularly at the initial stage of plasma-CVD SiN, deposition, should be selected to minimize the surface state density of possible antisite defects. Extremely low gate leakage currents of 50 nA/mm have been obtained with an improved process, which is useful to realize low-distortion FETs.
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The dielectric breakdown mechanism is studied from the viewpoint of the relationship with the generation of defect sites in the oxide film, utilizing the "A-mode" stress induced leakage current (A-mode SILC) under the constant-vol...
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The dielectric breakdown mechanism is studied from the viewpoint of the relationship with the generation of defect sites in the oxide film, utilizing the "A-mode" stress induced leakage current (A-mode SILC) under the constant-voltage stressing. It is demonstrated that the breakdown occurs when the A-mode SILC becomes a threshold level, I/sub th/. In spite of that, the constant I/sub th/ for various stress fields is expected by the conventional model which assumes that each defect site is generated randomly in the oxide film, I/sub th/, increases with the stress field. To explain this variety of I/sub th/ by the stress field, the concept of "breakdown-path creation efficiency" (/spl gamma//sub BPC/), is proposed, which represents the amount of defect sites in the whole gate area required to create a breakdown path from one side of oxide film to the other side at a local spot. According to this concept, it is demonstrated that the efficiency becomes smaller with the increase in the stress field. These results require us to take account the nonuniform distribution of defect sites in the oxide film into the model for the breakdown mechanism. The introduction of the stress-field dependent depth profile of defect sites allows to explain the variety of I/sub th/.
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The high leakage current in deep submicron regimes is becoming a significant contributor to the power dissipation of CMOS circuits as the threshold voltage, channel length, and gate oxide thickness are reduced. Consequently, the i...
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The high leakage current in deep submicron regimes is becoming a significant contributor to the power dissipation of CMOS circuits as the threshold voltage, channel length, and gate oxide thickness are reduced. Consequently, the identification and modeling of different leakage components is very important for the estimation and reduction of leakage power, especially in the low power applications. This paper explores the various transistor intrinsic leakage mechanisms including the weak inversion, the drain-induced barrier lowering, the gate-induced drain leakage, and the gate oxide tunneling.
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Electrochemical reactors with bipolar electrodes are widely used in industry and laboratories due to their ease of assembly and electrical connection. Understanding the impact of leakage currents on reactor performance is crucial ...
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Electrochemical reactors with bipolar electrodes are widely used in industry and laboratories due to their ease of assembly and electrical connection. Understanding the impact of leakage currents on reactor performance is crucial for design improvement. Previous studies have analyzed these devices using the Laplace equation and Tafel kinetics for a single bipolar electrode. A simplified analysis of a reactor with multiple bipolar electrodes was also conducted, neglecting the contribution of intermediate electrodes to the leakage current. In this article, a simplified model to analyse the influence of leakage current on the electrode current distribution in a reactor with n bipolar electrodes is developed. Multiple models to study the current that flows perpendicular to the electrodes and finally becomes parasitic current, are studied. Also two reaction kinetics, Tafel and Butler-Volmer, are taking into account. Experimental data of reactors with one bipolar electrode considering Tafel-type kinetics, and with one and two bipolar electrodes considering primary current distribution, are compared with predictions obtained through the Laplace equation, and the models of this paper. Furthermore, given the current importance of green hydrogen, this work sheds light on the implications of the study and design of electrochemical reactors used in its production.
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Moist polluting substances on high-voltage insulator surfaces can cause power-line failures by triggering electric arcs. There are at present no effective methods of measuring insulator pollution levels during normal operations. I...
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Moist polluting substances on high-voltage insulator surfaces can cause power-line failures by triggering electric arcs. There are at present no effective methods of measuring insulator pollution levels during normal operations. In this work, we attempt to estimate insulator pollution leakage current (PLC) as an indirect method of measuring deposits in a 30 month period of simultaneously recording leakage current and related environmental variables in substation insulators. We analyzed the relationship between raw leakage current and environmental variables. We canceled out the influence of relative humidity on leakage current by adaptive filtering and then obtained the PLC by filtering out the anomalous peaks in the recording. The proposed method considerably reduces the correlation between leakage current and relative humidity (0.826 vs 0.019). The resulting signal was only slightly correlated with other environmental variables (<0.03), suggesting that the relationships between leakage current and temperature, wind direction and speed are mainly attributable to their influence on relative humidity. The PLC presents a quasi-annual smooth fluctuation over time with a magnitude similar to those obtained in laboratory tests. This novel technique could be used to monitor insulator PLC in real time and thus improve power supply continuity and reduce maintenance costs.
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Leakage current is one of the main challenges facing high-density MOS-gated memristor arrays. In this study, we show that leakage current ruins the memory readout process for high-density arrays, and analyze the tradeoff between t...
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Leakage current is one of the main challenges facing high-density MOS-gated memristor arrays. In this study, we show that leakage current ruins the memory readout process for high-density arrays, and analyze the tradeoff between the array density and its power consumption. We propose a novel readout technique and its underlying circuitry, which is able to compensate for the transistor leakage-current effect in the high-density gated memristor array.
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Small-signal model of the MOSFET is an equivalent circuit of its electric components, which defines the electrical characteristics of a MOSFET. The non-quasi-static (NQS) model is one of the most accurate small-signal models used ...
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Small-signal model of the MOSFET is an equivalent circuit of its electric components, which defines the electrical characteristics of a MOSFET. The non-quasi-static (NQS) model is one of the most accurate small-signal models used for designing analog/RF circuits. Electronic circuits designed for advanced high-frequency analog/RF applications like (Long-Term Evolution) LTE and (Internet-of-Things) IoT applications, the proper selection of MOSFET is essential. The MOSFETs with lower static power dissipation and high linearity are best suitable for low-power high-frequency analog/digital circuit applications. In this paper, a cylindrical silicon-on-insulator (SOI) Schottky Barrier (SB) MOSFET is investigated, and analog/RF parameters such as transconductance (gm), intrinsic-voltage gain (A(V)), I-ON/I-OFF ratio, cutoff-frequency (f(T)), maximum oscillation frequency (f(max)), transconductance-generation factor (TGF), gain-frequency product (GFP), transconductance-frequency product (TFP), gain-bandwidth product (GBWP) and gain-transconductance frequency product (GTFP) are extracted. Also, the NQS small-signal model parameters of SOI-SB MOSFET are extracted for the analog circuit application for the frequency range up to 500 GHz. The analog/RF parameters and NQS small-signal parameters of cylindrical SOI-SB MOSFET are compared with cylindrical SB-MOSFET and cylindrical dielectric-pocket (DP) SB-MOSFET.
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