摘要 :
In this paper, we studied the aging time dependence of the catastrophic optical damage (COD) failure of an Al-free uncoated 0.98-/spl mu/m GaInAs-GaInP strained quantum-well laser with an injection current as a parameter. Based on...
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In this paper, we studied the aging time dependence of the catastrophic optical damage (COD) failure of an Al-free uncoated 0.98-/spl mu/m GaInAs-GaInP strained quantum-well laser with an injection current as a parameter. Based on the stress-strength model, we first investigated experimentally the dependence of the critical power level (CPL) at which COD would take place upon the aging time. Then applying a statistical treatment to this result, we found for the first time that CPL data at each aging time could be considered to distribute according to the Weibull statistics, and the decrease rate of the CPL with the aging time depended very strongly on the injection current. Finally, using the relationship between the decrease rate of the CPL with the aging time and the current, we predicted roughly the time of a COD failure occurrence for both large and small current cases. As a result, we clarified that for our Al-free uncoated 0.98-/spl mu/m laser, a COD failure became a fatal problem in the case of a large-current (high-power) operation.
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Fiber lasers have been extensivelydeployed in advanced manufacturing ap-plications such as precision cutting, mark-ing, micromachining, rapid prototypingand high-quality printing; their advan-tanges in terms of beam quality, dynam...
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Fiber lasers have been extensivelydeployed in advanced manufacturing ap-plications such as precision cutting, mark-ing, micromachining, rapid prototypingand high-quality printing; their advan-tanges in terms of beam quality, dynamicrange, wall-plug efficiency, reliability andcost are well recognised. New degrees ofoperational freedom can often beachieved enabling major improvementsin capability and/or competitiveness forend users. In some sectors (e.g. marking),fiber lasers have become the solution ofchoice and already take the predominantmarket share for new equipment invest-ments. Their performance and opera-tional advantages have led to widespreaddeployment, both geographically and indiverse applications. This market accep-tance has led to several of the major in-dustrial laser manufacturers entering themarket with their own fiber laser prod-ucts.
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We report on high-power 915-nm broad-area laser diodes with a window structure formed by a impurity-free vacancy disordering method. A maximum conversion efficiency of 68% and high output power of 19.8?W have been achieved at 20?°...
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We report on high-power 915-nm broad-area laser diodes with a window structure formed by a impurity-free vacancy disordering method. A maximum conversion efficiency of 68% and high output power of 19.8?W have been achieved at 20?°C. A stable operation over 2000?h has also been confirmed under the condition of an output power of 15?W at 25?°C. Far-field patterns suggest that the laser diode is suitable for coupling into an optical fiber with 105-μm core diameter and 0.15 numerical aperture.
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We report on the long-term reliable continuous wave (CW) operation of high-power and high-efficiency 915-nm broad-area laser diodes (BA-LDs). An output power of over 20 W and a maximum power-conversion efficiency of over 65% have ...
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We report on the long-term reliable continuous wave (CW) operation of high-power and high-efficiency 915-nm broad-area laser diodes (BA-LDs). An output power of over 20 W and a maximum power-conversion efficiency of over 65% have been marked at a heat-sink temperature of 20 °C. Stable operations of over 5000 h have also been achieved for the 915-nm and 976-nm BA-LDs with CW output powers of 20 W, respectively. The window structure with a bandgap difference of 100 meV provides the reliable operation at the high-output power range.
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We discuss various mechanisms of laser diode degradation based on our own experiments and on the available literature data. In most of the cases, degradation of InGaN laser diodes occurs through the increase of the threshold curre...
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We discuss various mechanisms of laser diode degradation based on our own experiments and on the available literature data. In most of the cases, degradation of InGaN laser diodes occurs through the increase of the threshold current with almost constant slope efficiency. The threshold current change follows frequently the square root on time dependence. Though this type of behavior has usually been attributed to magnesium acceptor diffusion, no firm proof of such a hypothesis has so far been presented. In contrast, there is an increasing number of reported experiments showing that the most important factor contributing to fast (hours), and medium time (hundreds of hours) degradation is the process of carbon deposition. This process involves photochemical reactions leading to the decomposition of hydrocarbons existing in the laser diode environment. This process resembles very closely the mechanism responsible for 980-nm laser diode degradation and known as Package Induced Failure.
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The authors achieved loss-coupled 1.55 μm distributed feedback laser diode incorporating automatically buried absorptive layer implemented by a single step growth that simplifies device fabrication than those of conventional ones...
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The authors achieved loss-coupled 1.55 μm distributed feedback laser diode incorporating automatically buried absorptive layer implemented by a single step growth that simplifies device fabrication than those of conventional ones. Based on 2800 h of accelerated aging test, estimated lifetime is 1.4 × 10{sup}6 h at room temperature.
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Molecular beam epitaxy (MBE) growth, device fabrication, and reliable operation of high-power InAlGaAs/GaAs and GaAlAs/GaAs laser arrays are described. Both InAlGaAs/GaAs and AlGaAs/GaAs laser arrays reached maximum continuous wav...
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Molecular beam epitaxy (MBE) growth, device fabrication, and reliable operation of high-power InAlGaAs/GaAs and GaAlAs/GaAs laser arrays are described. Both InAlGaAs/GaAs and AlGaAs/GaAs laser arrays reached maximum continuous wave output powers of 40 W at room temperature. The external quantum efficiency was 50% and 45% for the InAlGaAs/GaAs and AlGaAs/GaAs laser arrays, respectively. Threshold current density for InAlGaAs/GaAs and AlGaAs/GaAs lasers was 303 A/cm~(2) and 379 A/cm~(2), respectively. While the current of AlGaAs laser arrays went up significantly after 1000 h of operation at a constant power of 40 W, InAlGaAs laser arrays had an increase in the injection current of less than 4% after 3000 h at 40 W.
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More than 99 percent of all lasers manufactured in the world today are semiconductor laser diodes. Reliability is a concern in every laser diode application, whether it is a simple $10 laser pointer or a space-qualified optical tr...
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More than 99 percent of all lasers manufactured in the world today are semiconductor laser diodes. Reliability is a concern in every laser diode application, whether it is a simple $10 laser pointer or a space-qualified optical transmitter link. The commercial success of a laser supplier rests largely on his ability to develop a robust manufacturing process that consistently produces reliable devices combined with the quantitative assurances he can provide to his customers proving the reliability of his devices. Over the past two decades, laser diode reliability testing techniques and equipment have evolved to support the diverse development of laser diodes.
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Reliable operation of 650-nm laser bars with GaInP quantum wells embedded in AlGaInP waveguide layers and n-AlInP and p-AlGaAs cladding layers is reported. The 5-mm-wide bars consisting of ten emitters with 100-$muhbox m$-wide str...
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Reliable operation of 650-nm laser bars with GaInP quantum wells embedded in AlGaInP waveguide layers and n-AlInP and p-AlGaAs cladding layers is reported. The 5-mm-wide bars consisting of ten emitters with 100-$muhbox m$-wide stripe width showed reliable operation over 2000 h at 5 W.
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A double-peaked spectrum in some distributed feedback laser diodes is demonstrated to relate to axially confined catastrophic optical damage (COD), followed by the excitation of a transversal optical mode. The melting-regrowth kin...
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A double-peaked spectrum in some distributed feedback laser diodes is demonstrated to relate to axially confined catastrophic optical damage (COD), followed by the excitation of a transversal optical mode. The melting-regrowth kinetics of CODs also reveal another possibility of COD-induced side optical modes in a fiber distributed Bragg reflector pump laser diode. A third case completely reverses the cause-effect relationship between CODs and lateral optical harmonics.
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