摘要 :
Herein, organic-free all-solid-state based perovskite solar cells (PSCs) are successfully fabricated by one-step method. The absorption position of the non-perovskite cesium lead iodide (δ-CsPbI
3
) was significantly shifted towa...
展开
Herein, organic-free all-solid-state based perovskite solar cells (PSCs) are successfully fabricated by one-step method. The absorption position of the non-perovskite cesium lead iodide (δ-CsPbI
3
) was significantly shifted towards longer wavelength side by substituting indium (In) ion with different stoichiometric ratio. The authors demonstrated a facile route to achieve high efficiency by the fabrication of room temperature stable mixed-phase CsPbI
3
perovskite. Photovoltaic efficiency of doped perovskite is four times increased compared to pure yellow phase CsPbI
3
. To the best of the authors' knowledge, this is the first demonstration of In-doped-CsPbI
3
based PSCs, which was fabricated under completely open-air atmosphere.
收起
摘要 :
In this work, we fabricated Pd-functionalized networked In_2O_3 nanowires. For the Pd-functionalization, In_2O_3-Pd core-shell nanowires were synthesized by depositing Pd layers using a sputtering method on bare In_2O_3 nanowires....
展开
In this work, we fabricated Pd-functionalized networked In_2O_3 nanowires. For the Pd-functionalization, In_2O_3-Pd core-shell nanowires were synthesized by depositing Pd layers using a sputtering method on bare In_2O_3 nanowires. The continuous Pd shell layers were transformed into islands of cubic Pd/PdO phase by thermal heating. We compared the NO_2 sensing characteristics of the sensors fabricated from Pd-functionalized and bare In_2O_3nanowires, respectively. The results demonstrated that Pd function-alization greatly improves sensitivity and response time in In_2O_3 nanowire-based gas sensors. The improvement of sensing properties is likely caused by not only the enhanced adsorption or dissociation of NO_2, but also the associated spillover effects, which are both caused by the Pd-functionalization.
收起
摘要 :
We report on the successful surface passivation of wide recess InGaP/InGaAs/GaAs pseudomorphic HEMTs with MBE-grown ultrathin GaS film (2 nm) employing a single precursor, tertiarybutyl-galliumsulfide-cubane ([(t-Bu)GaS]/sub 4/). ...
展开
We report on the successful surface passivation of wide recess InGaP/InGaAs/GaAs pseudomorphic HEMTs with MBE-grown ultrathin GaS film (2 nm) employing a single precursor, tertiarybutyl-galliumsulfide-cubane ([(t-Bu)GaS]/sub 4/). At the recess length of 1.1 /spl mu/m, a GaS-passivated device with a 0.5-/spl mu/m gate length has the maximum transconductance (g/sub m max/) of 347 mS/mm, which is about 40% higher than that of 240 mS/mm for a device without GaS passivation. We found that one of the causes of an increased g/sub m max/ is the decrease of sheet resistance on the recessed surface because GaS passivation has reduced the depletion layer. Meanwhile, the two-terminal gate-to-drain reverse breakdown voltage (BV/sub gd/) was reduced after GaS passivation. The BV/sub gd/ is independent of the recess length between gate and drain (L/sub gd/) for GaS-passivated devices, unlike that for devices without GaS passivation. According to our calculation of the BV/sub gd/ involving the effects of impact ionization and the interface state, the BV/sub gd/ becomes almost independent of the L/sub gd/, when the interface state density (N/sub int/) is below 1/spl times/10/sup 12/ cm/sup -2/. Then, the calculated surface potential at the recess region is less than 0 eV. This result suggests that GaS passivation can remarkably reduce the N/sub int/ at the recess region.
收起
摘要 :
Double heterojunction (DH) In/sub 0.48/Ga/sub 0.52/P/In/sub 0.20/Ga/sub 0.80/As and strained single heterojunction (SSH) In/sub 0.40/Ga/sub 0.60/P/In/sub 0.20/Ga/sub 0.80/As/GaAs high electron mobility transistor (HEMT) structures...
展开
Double heterojunction (DH) In/sub 0.48/Ga/sub 0.52/P/In/sub 0.20/Ga/sub 0.80/As and strained single heterojunction (SSH) In/sub 0.40/Ga/sub 0.60/P/In/sub 0.20/Ga/sub 0.80/As/GaAs high electron mobility transistor (HEMT) structures were grown by solid-source molecular beam epitaxy (SSMBE) using a valved phosphorus cracker cell. The DC and RF performance of the SSH-HEMT and DH-HEMT were compared with the single heterojunction (SH) HEMT. The results show a significant improvement in device characteristics in the SSH-HEMT with In/sub 0.40/Ga/sub 0.60/P spacer and Schottky layer, due to better carrier confinement in the channel. The SSH-HEMT with 0.35-/spl mu/m gate length exhibits a peak transconductance (G/sub m/) of 470 mS/mm, maximum drain current (I/sub DSmax/) of 550 mA/mm, and current gain cut-off frequency (f/sub T/) of 50 GHz. These values are approximately 7%, 10% and 25% higher than the respective values for a DH-HEMT of identical gate length.
收起
摘要 :
Indium hydride generated from tributyltin hydride and indium trichloride was coordinated by a phosphine to reduce acid chlorides to the corresponding aldehydes selectively. This reaction was achieved by a catalytic amount of indium trichloride.
摘要 :
The electrical characteristics of n-and p-type indium phosphide interfaces with the soluble polyacetylene derivative poly(N,N,N-trimethyl-#beta#-cyclooctatetraenylethylammonium trifluoromethane sulfonate) are reported as a functio...
展开
The electrical characteristics of n-and p-type indium phosphide interfaces with the soluble polyacetylene derivative poly(N,N,N-trimethyl-#beta#-cyclooctatetraenylethylammonium trifluoromethane sulfonate) are reported as a function of the polymer's electrochemical potential. The interfaces exhibit current rectification with diode quality factors in the range 1.03-1.25. By electrochemically switching the polymer in situ from its oxidatively doped (E=0.6 V versus SCE) to its reductivity doped (E= -1.3 V versus SCE) state, it is possible to vary the effective barrier hight of the interfaces over a range of up to 0.5 V. The results for n-InP are particularly notable with the observation of one of the highest effective barrier heights (#phi#_b~(eff)=1.0 V) yet achieved for this material.
收起
摘要 :
Donor-free, uncharged molecular compounds (RM)_n and (R_2M_)2 with clusters formed from the boron homologues M = Al, Ga, In, Tl have--unlike such compounds with boron clusters--only been known for about ten years. In fact, the com...
展开
Donor-free, uncharged molecular compounds (RM)_n and (R_2M_)2 with clusters formed from the boron homologues M = Al, Ga, In, Tl have--unlike such compounds with boron clusters--only been known for about ten years. In fact, the compounds of the boron homologues have a tendency to disproportionate (6 RM --> 3 R_2M +3 M --> 2 R_3M + 4 M); however, this process can be stopped at the (RM)_n stage (very bulky groups) or at the (R_2M_)2 stage (medium-sized bulky groups) by employing bulky substituents R such as C_5Me_5 (Cp*), C_5(CH_2Ph)_5 (Cp**), CH(SiMe_3)_2 (Disyl), C(SiMe_3)_3 (Trisyl), 2,4,6-iPr_3C_6H_2 (Trip). 2,4,6-(CF_3)_3C_6H_2 (R~F). Si(SiMe_3)_3 (Hypersilyl), and SitBu, (Supersilyl). Known examples of R_4M_2 and (RM)_n compounds with normal covalent M-M bonds are [(Me_3Si)_2CH]_4M_2 (M = Al, Ga, In), (2.4,6-iPr_3C_6H_2)_4M_2 (M = Al, Ga), [2,4,6-(CF_3)_3C_6H_2]_4M_2 (M = Ga, In), or [(Me_3Si)_3Si]_4Tl_2, and (RA1)_4 (R = SitBu_3, Cp*), (RGa)_4 (R = C(SiMe_3)_3, Si(SiMe_3)_3) or [(Me_3Si)_3CIn]_4, respectively. Only very weak M-M interactions are present in the compounds (Cp*In)_6 and (Cp**M)_2 (M = In, Tl).
收起
摘要 :
Boron hydrides have been an object of intensive theoretical and experimental investigation for many decades due to their unusual and somewhat unique bonding patterns. Despite boron being a neighboring element to carbon, boron hydr...
展开
Boron hydrides have been an object of intensive theoretical and experimental investigation for many decades due to their unusual and somewhat unique bonding patterns. Despite boron being a neighboring element to carbon, boron hydrides almost always form non-classical structures with multi-center bonds. However, we expect indium to form its interesting molecules with non-classical patterns, though such molecules still need to be extensively studied theoretically. In this work, we investigated indium hydrides of In2Hx (x = 0–4,6) and In3Hy (y = 0–5) series via DFT and ab initio quantum chemistry methods, performing a global minimum search, chemical bonding analysis, and studies of their thermodynamical stability. We found that the bonding pattern of indium hydrides differs from the classical structures composed of 1c-2e lone pairs and 2c-2e bonds and the bonding pattern of earlier investigated boron hydrides of the BnHn+2 series. The studied stoichiometries are characterized by multi-center bonds, aromaticity, and the tendency for indium to preserve the 1c-2e lone pair.
收起
摘要 :
Treatment of tri-O-acetyl-D-glucal 1 with various alcohols and phenols in the presence of InCl_3/CH_2Cl_2 at ambient temperfture gave the corresponding alkyl and aryl 2,3-unsaturated glycopyranosides in excellent yields with short...
展开
Treatment of tri-O-acetyl-D-glucal 1 with various alcohols and phenols in the presence of InCl_3/CH_2Cl_2 at ambient temperfture gave the corresponding alkyl and aryl 2,3-unsaturated glycopyranosides in excellent yields with short reaction times and good anomeric selectivity.
收起
摘要 :
The reaction of 2-(bromomethyl)acrylic acid (2) with different carbonyl compounds 1 [CH_2O, (E)-CH_3CH=CHCHO, ~iPrCHO, ~tBuCHO, PhCHO, CH_3(CH_2)_5CHO, c-C_6H_(11)CHO, Ph_2CHCHO, (CH_2)_5CO, furfural, 1,4-cyclohexanedione, 2-chlor...
展开
The reaction of 2-(bromomethyl)acrylic acid (2) with different carbonyl compounds 1 [CH_2O, (E)-CH_3CH=CHCHO, ~iPrCHO, ~tBuCHO, PhCHO, CH_3(CH_2)_5CHO, c-C_6H_(11)CHO, Ph_2CHCHO, (CH_2)_5CO, furfural, 1,4-cyclohexanedione, 2-chlorocyclohexanone, 2-hydroxybenzaldehyde, phthaldehyde, N-Boc-3-indolecarboxaldehyde, cholestanone, (1R)-(-)-myrtenal] and indium powder in a 1:1 THF:H_2O mixture at room temperature affords, after acidic work-up with 6M hydrochloric acid, the corresponding #alpha#-methylene-#gamma#-lactones 3.
收起
原文获取