摘要 : The electronic package with lead-free welding processes must be performed at higher temperature whereas the heat induces to mechanical stress. In this letter, we fabricate a low-<formula formulatype="inline"><tex Notation="TeX">$k... 展开 The electronic package with lead-free welding processes must be performed at higher temperature whereas the heat induces to mechanical stress. In this letter, we fabricate a low-<formula formulatype="inline"><tex Notation="TeX">$k$</tex></formula> SiOC dielectric comb capacitor with dual damascene (DD) structures to study the mechanical stress influence on leakage current <formula formulatype="inline"><tex Notation="TeX">$I_{rm leak}$</tex></formula> in DD by bending samples. Tensile stress causes increase of the <formula formulatype="inline"><tex Notation="TeX">$I_{rm leak}$</tex></formula> because of the decrease of energy band barrier <formula formulatype="inline"><tex Notation="TeX">$Phi$</tex></formula> of SiOC dielectric. In contrast, compress stress increases <formula formulatype="inline"><tex Notation="TeX">$Phi$</tex></formula> of SiOC and decreases its <formula formulatype="inline"><tex Notation="TeX">$I_{rm leak}$</tex></formula>. Finally, we conclude that the electron transport in DD is dominated by Schottky emission. We found that the variation of <formula formulatype="inline"><tex Notation="TeX">$I_{rm leak}$</tex></formula> is attributed by the change of energy band barrier under mechanical stress. 收起