国际刊号：
0741-3106
出版周期：
Monthly
| 序号 | 标题 | 作者 | 起始页 | 操作 |
|---|---|---|---|---|
| 1 | IEEE Electron Device Letters Publication Information | |||
| 2 | Blank Page | |||
| 3 | Front Cover | |||
| 4 | IEEE Transactions on Electron Devices Table of Contents | 1 | ||
| 5 | Table of Contents | 1,401 | ||
| 6 | Changes to the Editorial Board | Sayeef Salahuddin | 1,404 | |
| 7 | Multiple P-Type SiC Micro-Island as Junction Termination Extension for 4H-SiC Schottky Barrier Diode | Xinyu Wang, Dengwen Yuan, Lingling Lai... | 1,405 | |
| 8 | A 4H-SiC CMOS SPICE Level 3 Model for Circuit Simulations | Nicola Rinaldi, Alexander May, Mathias Rommel... | 1,409 | |
| 9 | High Temperature Tolerant Ge-on-Si Single Photon Avalanche Diode at the Communication Wavelength | Chi-En Chen, Shih-Min Huang, Tzu-Jui Wang... | 1,413 | |
| 10 | Optimizing the Size of Vertical-Junction GaAs PV Cells With AlGaAs Gradient Waveguide | Vladimir P. Khvostikov, Alexander N. Panchak, Olga A. Khvostikova... | 1,417 |
