硒化镉(CdSe)是一种光学和电学性能优异的Ⅱ-Ⅵ族半导体材料．以硫化镉(CdS)晶片作为籽晶，采用物理气相传输(PVT)法生长出大尺寸 CdSe 单晶，并对其晶体结构和光学性能进行了表征．EDS 和 Raman 测试显示，在晶体生长初期形成了 CdSexS1-x，随着晶体生长硫元素含量逐渐减少并最终消失，最终生长出的 CdSe 材料为纯相的纤锌矿型CdSe晶体材料．XRD测试显示CdSe晶体的晶格完整性较高．以上结果表明，PVT法是一种理想的大尺寸CdSe单晶生长方法．
Cadmium selenium(CdSe)is an important II-VI semiconductor with excellent optical and electrical proper-ties.Large size CdSe single crystal was grown by using physical vapor transport(PVT)method and with cadmium sul-fide(CdS)as seed crystal,and the crystal structure and optical properties of the new crystal material were characterized.EDS and Raman spectra showed that the CdSexS1-x was formed at the initial phase of the crystal growth,and then pure CdSe crys-tal material with wurtzite structure came into being while sulfur element disappeared gradually.The XRD spectra showed that the CdSe single crystal with high lattice perfection was obtained.The results show that PVT is a suitable method to grow large size CdSe crystal.
张颖武;练小正;程红娟
中国电子科技集团公司第四十六研究所，天津 300220
数理科学
CdSe;大尺寸;单晶;PVT法
CdSe;large size;single crystal;PVT method
《天津科技大学学报》 2015 (006)
34-37 / 4
10.13364/j.issn.1672-6510.20150077
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